| PART |
Description |
Maker |
| AWM6268 AWM6268P8 |
2.5-2.7 GHz Mobile WiMAX/LTE Power Amplifier Module
|
ANADIGICS, Inc
|
| AP561-PCB2500 |
0.7-2.9 GHz WiMAX 8W Power Amplifier
|
TriQuint Semiconductor
|
| 2500AT44M0400 |
WiMAX 2.3 - 2.7 GHz Chip Antenna
|
Johanson Technology Inc.
|
| UPC2771T UPC8182TB UPC8182TB-E3 UPC2762T UPC2763T |
3 V/ 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS
3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS
|
NEC
|
| UPC2771T |
3 V/ 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS
|
NEC
|
| N7615B |
Signal Studio for Mobile WiMAX?
|
Keysight Technologies
|
| UPC8182TB-E3-AZ UPC8182TB UPC8182TB-E3 UPC2762T UP |
3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS 3伏，2.9千兆赫硅MMIC中功率放大器输出功率移动通信
|
NEC, Corp.
California Eastern Laboratories, Inc.
NEC Corp.
NEC[NEC]
|
| CLY2 Q62702-L96 |
GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz) 砷化镓场效应管（功放为频率高千兆赫移动电话）
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| CLY15 Q62702-L99 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) 砷化镓场效应管（功率放大器，对于00兆赫2.5千兆赫频率的移动电话
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BLF6G38LS-100 |
WiMAX power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLF6G38-100 BLF6G38LS-100 |
WiMAX power LDMOS transistor
|
NXP Semiconductors
|
